si2309ds vishay siliconix document number: 70835 s-21339?rev. b, 05-aug-02 www.vishay.com 2-1 p-channel 60-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 0.340 @ v gs = -10 v - 1.25 -60 0.550 @ v gs = -4.5 v -1 g to-236 (sot-23) s d top view 2 3 1 si2309ds (a9)* *marking code absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -60 gate-source voltage v gs 20 v a, b t a = 25 c -1.25 continuous drain current (t j = 150 c) a, b t a = 100 c i d -0.85 pulsed drain current i dm -8 a avalanche current l = 0.1 mh i as -5 t a = 25 c 1.25 maximum power dissipation a, b t a = 70 c p d 0.8 w operating junction and storage temperature range t j , t stg -55 to 150 c thermal resistance ratings parameter symbol typical maximum unit t 5 sec 100 maximum junction-to-ambient a steady state r thja 130 166 c/w maximum junction-to-lead a steady state r thjl 45 60 c/w notes a. surface mounted on fr4 board. b. t 5 sec.
si2309ds vishay siliconix www.vishay.com 2-2 document number: 70835 s-21339 ? rev. b, 05-aug-02 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v ds = 0 v, i d = -250 a -60 gate threshold voltage v gs(th) v ds = v gs , i d = -250 a -1 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = -48 v, v gs = 0 v -1 zero gate voltage drain current i dss v ds = -48 v, v gs = 0 v, t j = 125 c -50 a on-state drain current a i d(on) v ds -4.5 v, v gs = -10 v -6 a v gs = -10 v, i d = -1.25 a 0.275 0.340 drain-source on-state resistance a r ds(on) v gs = -4.5 v, i d = -1 a 0.406 0.550 forward transconductance a g fs v ds = -4.5 v, i d = -1 a 1.9 s dynamic b total gate charge q g 5.4 12 gate-source charge q gs v ds = -30 v, v gs = -10 v, i d = -1.25 a 1.15 nc gate-drain charge q gd ds gs d 0.92 turn-on delay time t d(on) 10.5 20 rise time t r v dd = -30 v, r l = 30 11.5 20 turn-off delay time t d(off) v dd = -30 v, r l = 30 i d -1 a, v gen = -4.5 v, r g = 6 15.5 30 ns fall time t f 7.5 15 source-drain rating characteristics b continuous current i s -1.25 pulsed current i sm -8 a diode forward voltage a v sd i s = -1.25 a, v gs = 0 v -0.82 -1.2 v source-drain reverse recovery time t rr i f = -1.25 a, di/dt = 100 a/ s 30 55 ns notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 1 2 3 4 5 6 012345 0 2 4 6 8 0246810 v gs = 10 thru 6 v 25 c t c = -55 c 3 v 125 c 4 v output characteristics transfer characteristics v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d 1, 2 v 5 v
si2309ds vishay siliconix document number: 70835 s-21339 ? rev. b, 05-aug-02 www.vishay.com 2-3 typical characteristics (25 c unless noted) 0.0 0.3 0.6 0.9 1.2 1.5 02468 0 2 4 6 8 10 0123456 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 0 100 200 300 400 500 0 6 12 18 24 30 c rss c oss c iss v ds = 30 v i d = 1.25 a v gs = 10 v i d = 1.25 a v gs = 4.5 v v gs = 10 v gate charge on-resistance vs. drain current - gate-to-source voltage (v) q g - total gate charge (nc) v ds - drain-to-source voltage (v) c - capacitance (pf) v gs - on-resistance ( r ds(on) ) i d - drain current (a) capacitance on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) 1.0 1.2 0.0 0.2 0.4 0.6 0.8 1.0 0246810 0.1 1 10 i d = 1.25 a 0.00 0.2 0.4 0.6 0.8 t j = 25 c source-drain diode forward voltage on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s t j = 150 c
si2309ds vishay siliconix www.vishay.com 2-4 document number: 70835 s-21339 ? rev. b, 05-aug-02 typical characteristics (25 c unless noted) -0.4 -0.2 0.0 0.2 0.4 0.6 -50 -25 0 25 50 75 100 125 150 i d = 250 a 0.01 0 1 6 12 2 4 10 500 0.1 threshold voltage variance (v) v gs(th) t j - temperature ( c) power (w) single pulse power time (sec) 8 10 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 2 1 0.1 0.01 10 -3 10 -2 1 10 500 10 -1 10 -4 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 100 1. duty cycle, d = 2. per unit base = r thja = 130 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 100 t a = 25 c safe operating area, junction-to-ambient v ds - drain-to-source voltage (v) 100 1 0.1 1 10 100 0.01 10 - drain current (a) i d 0.1 limited by r ds(on) ta = 25 c single pulse 10 s 100 s 1 ms 10 ms 100 ms dc, 100 s, 10 s, 1 s
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